A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
Differences in Emission Spectra of Dislocations in 4H-SiC Epitaxial Layers
Differences in Emission Spectra of Dislocations in 4H-SiC Epitaxial Layers
Differences in Emission Spectra of Dislocations in 4H-SiC Epitaxial Layers
Liu, K.X. (author) / Zhang, X. (author) / Stahlbush, R.E. (author) / Skowronski, M. (author) / Caldwell, J.D. (author)
MATERIALS SCIENCE FORUM ; 600/603 ; 345-348
2009-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Investigation of In-Grown Dislocations in 4H-SiC Epitaxial Layers
| British Library Online Contents | 2006
Bending of Basal-Plane Dislocations in VPE Grown 4H-SiC Epitaxial Layers
| British Library Online Contents | 2002
Comparative study of threading dislocations in GaN epitaxial layers by nondestructive methods
| British Library Online Contents | 2017
Comparative study of threading dislocations in GaN epitaxial layers by nondestructive methods
| British Library Online Contents | 2017
| British Library Online Contents | 2008