A platform for research: civil engineering, architecture and urbanism
SiC Migration Enhanced Embedded Epitaxial (ME^3) Growth Technology
SiC Migration Enhanced Embedded Epitaxial (ME^3) Growth Technology
SiC Migration Enhanced Embedded Epitaxial (ME^3) Growth Technology
Takeuchi, Y. (author) / Kataoka, M. (author) / Kimoto, T. (author) / Matsunami, H. (author) / Malhan, R. K. (author) / Devaty, R. P. / Larkin, D. J. / Saddow, S. E.
2006-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
In Situ Nitrogen and Aluminum Doping in Migration Enhanced Embedded Epitaxial Growth of 4H-SiC
British Library Online Contents | 2009
|Migration and related buried epitaxy using digital epitaxial growth conditions
British Library Online Contents | 1994
|Springer Verlag | 2002
|Recent Progress in SiC Epitaxial Growth and Device Processing Technology
British Library Online Contents | 2001
|Evaluating epitaxial growth stability
British Library Online Contents | 1997
|