Nitrogen-Doping of Polycrystalline 3C-SiC Films Deposited by Low Pressure Chemical Vapor Deposition: Fid-Bau Portal

Nitrogen-Doping of Polycrystalline 3C-SiC Films Deposited by Low Pressure Chemical Vapor Deposition

Fu, X. A. / Trevino, J. / Mehregany, M. / Zorman, C. A.

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Nitrogen-Doping of Polycrystalline 3C-SiC Films Deposited by Low Pressure Chemical Vapor Deposition

Fu, X. A. / Trevino, J. / Mehregany, M. / Zorman, C. A.

Nitrogen-Doping of Polycrystalline 3C-SiC Films Deposited by Low Pressure Chemical Vapor Deposition

Fu, X. A. / Trevino, J. / Mehregany, M. / Zorman, C. A.

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Check availability in my library

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Document information

Title:

Nitrogen-Doping of Polycrystalline 3C-SiC Films Deposited by Low Pressure Chemical Vapor Deposition

Contributors:

Fu, X. A. (author) / Trevino, J. (author) / Mehregany, M. (author) / Zorman, C. A. (author) / Devaty, R. P. / Larkin, D. J. / Saddow, S. E.

Published in:

Silicon Carbide and Related Materials - 2005 ; 311-314

MATERIALS SCIENCE FORUM ; 527/529

Publication date:

2006-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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