Characterization of Stacking Fault-Induced Behavior in 4H-SiC p-i-n Diodes: Fid-Bau Portal

Characterization of Stacking Fault-Induced Behavior in 4H-SiC p-i-n Diodes

Wang, Y. / Chen, L. / Mikhov, M. K. / Samson, G. / Skromme, B. J.

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Characterization of Stacking Fault-Induced Behavior in 4H-SiC p-i-n Diodes

Wang, Y. / Chen, L. / Mikhov, M. K. / Samson, G. / Skromme, B. J.

Characterization of Stacking Fault-Induced Behavior in 4H-SiC p-i-n Diodes

Wang, Y. / Chen, L. / Mikhov, M. K. / Samson, G. / Skromme, B. J.

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Document information

Title:

Characterization of Stacking Fault-Induced Behavior in 4H-SiC p-i-n Diodes

Contributors:

Wang, Y. (author) / Chen, L. (author) / Mikhov, M. K. (author) / Samson, G. (author) / Skromme, B. J. (author) / Devaty, R. P. / Larkin, D. J. / Saddow, S. E.

Published in:

Silicon Carbide and Related Materials - 2005 ; 363-366

MATERIALS SCIENCE FORUM ; 527/529

Publication date:

2006-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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