Performance of Silicon Carbide PiN Diodes Fabricated on Basal Plane Dislocation-Free Epilayers: Fid-Bau Portal

Performance of Silicon Carbide PiN Diodes Fabricated on Basal Plane Dislocation-Free Epilayers

Zhang, Z. H. / Grekov, A. E. / Sadagopan, P. / Maximenko, S. I. / Sudarshan, T. S.

Access

Access via TIB

Check availability in my library

Order at Subito €

Page navigation

Document information

Similar titles

Export, share and cite

Performance of Silicon Carbide PiN Diodes Fabricated on Basal Plane Dislocation-Free Epilayers

Zhang, Z. H. / Grekov, A. E. / Sadagopan, P. / Maximenko, S. I. / Sudarshan, T. S.

Performance of Silicon Carbide PiN Diodes Fabricated on Basal Plane Dislocation-Free Epilayers

Zhang, Z. H. / Grekov, A. E. / Sadagopan, P. / Maximenko, S. I. / Sudarshan, T. S.

Access

Access via TIB

Check availability in my library

Order at Subito €

Page navigation

Document information

Similar titles

Export, share and cite

Document information

Title:

Performance of Silicon Carbide PiN Diodes Fabricated on Basal Plane Dislocation-Free Epilayers

Contributors:

Zhang, Z. H. (author) / Grekov, A. E. (author) / Sadagopan, P. (author) / Maximenko, S. I. (author) / Sudarshan, T. S. (author) / Devaty, R. P. / Larkin, D. J. / Saddow, S. E.

Published in:

Silicon Carbide and Related Materials - 2005 ; 371-374

MATERIALS SCIENCE FORUM ; 527/529

Publication date:

2006-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

Wheeler, V.D. / VanMil, B.L. / Myers-Ward, R.L. et al. | British Library Online Contents | 2011

Characterization of 100 mm Diameter 4H-Silicon Carbide Crystals with Extremely Low Basal Plane Dislocation Density

Dudley, M. / Zhang, N. / Zhang, Y. et al. | British Library Online Contents | 2010

Low Trap Concentration and Low Basal-Plane Dislocation Density in 4H-SiC Epilayers Grown at High Growth Rate

Hori, T. / Danno, K. / Kimoto, T. | British Library Online Contents | 2007

Basal Plane Dislocations in 4H-SiC Epilayers with Different Dopings

Zhang, X. / Nagano, M. / Tsuchida, H. | British Library Online Contents | 2012

Simulation of Threading Edge Dislocation Images in X-Ray Topographs of Silicon Carbide Homo-Epilayers

Vetter, W. M. / Tsuchida, H. / Kamata, I. et al. | British Library Online Contents | 2006