Characterization of 100 mm Diameter 4H-Silicon Carbide Crystals with Extremely Low Basal Plane Dislocation Density: Fid-Bau Portal

Characterization of 100 mm Diameter 4H-Silicon Carbide Crystals with Extremely Low Basal Plane Dislocation Density

Dudley, M. / Zhang, N. / Zhang, Y. / Raghothamachar, B. / Byrappa, S. / Choi, G. / Sanchez, E.K. / Hansen, D.M. / Drachev, R. / Loboda, M.J.

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Characterization of 100 mm Diameter 4H-Silicon Carbide Crystals with Extremely Low Basal Plane Dislocation Density

Dudley, M. / Zhang, N. / Zhang, Y. / Raghothamachar, B. / Byrappa, S. / Choi, G. / Sanchez, E.K. / Hansen, D.M. / Drachev, R. / Loboda, M.J.

Characterization of 100 mm Diameter 4H-Silicon Carbide Crystals with Extremely Low Basal Plane Dislocation Density

Dudley, M. / Zhang, N. / Zhang, Y. / Raghothamachar, B. / Byrappa, S. / Choi, G. / Sanchez, E.K. / Hansen, D.M. / Drachev, R. / Loboda, M.J.

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Title:

Characterization of 100 mm Diameter 4H-Silicon Carbide Crystals with Extremely Low Basal Plane Dislocation Density

Contributors:

Dudley, M. (author) / Zhang, N. (author) / Zhang, Y. (author) / Raghothamachar, B. (author) / Byrappa, S. (author) / Choi, G. (author) / Sanchez, E.K. (author) / Hansen, D.M. (author) / Drachev, R. (author) / Loboda, M.J. (author)

Published in:

Silicon Carbide and Related Materials 2009 ; 291-294

MATERIALS SCIENCE FORUM ; 645/648

Publication date:

2010-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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