Effects of Nitrogen Doping on Basal Plane Dislocation Reduction in 8^o Off-Cut 4H-SiC Epilayers: Fid-Bau Portal

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Effects of Nitrogen Doping on Basal Plane Dislocation Reduction in 8^o Off-Cut 4H-SiC Epilayers

Wheeler, V.D. / VanMil, B.L. / Myers-Ward, R.L. / Chung, S. / Picard, Y.N. / Skowronski, M. / Stahlbush, R.E. / Mahadik, N.A. / Eddy, C.R. / Gaskill, D.K.

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Effects of Nitrogen Doping on Basal Plane Dislocation Reduction in 8^o Off-Cut 4H-SiC Epilayers

Wheeler, V.D. / VanMil, B.L. / Myers-Ward, R.L. / Chung, S. / Picard, Y.N. / Skowronski, M. / Stahlbush, R.E. / Mahadik, N.A. / Eddy, C.R. / Gaskill, D.K.

Effects of Nitrogen Doping on Basal Plane Dislocation Reduction in 8^o Off-Cut 4H-SiC Epilayers

Wheeler, V.D. / VanMil, B.L. / Myers-Ward, R.L. / Chung, S. / Picard, Y.N. / Skowronski, M. / Stahlbush, R.E. / Mahadik, N.A. / Eddy, C.R. / Gaskill, D.K.

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Title:

Effects of Nitrogen Doping on Basal Plane Dislocation Reduction in 8^o Off-Cut 4H-SiC Epilayers

Contributors:

Wheeler, V.D. (author) / VanMil, B.L. (author) / Myers-Ward, R.L. (author) / Chung, S. (author) / Picard, Y.N. (author) / Skowronski, M. (author) / Stahlbush, R.E. (author) / Mahadik, N.A. (author) / Eddy, C.R. (author) / Gaskill, D.K. (author)

Published in:

Silicon Carbide and Related Materials 2010 ; 63-66

MATERIALS SCIENCE FORUM ; 679/680

Publication date:

2011-01-01

Size:

4 pages

ISSN:

Type of media:

Article (Journal)

Type of material:

Print

Language:

English

Classification:

© Metadata Copyright the British Library Board and other contributors. All rights reserved.

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