Conversion of Basal Plane Dislocations to Threading Edge Dislocations by Annealing 4H-SiC Epilayers at High Temperatures

Zhang, X. / Nagano, M. / Tsuchida, H. | British Library Online Contents | 2013

Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} Substrates

Tsuchida, H. / Miyanagi, T. / Kamata, I. et al. | British Library Online Contents | 2005

Characterization of Basal Plane Dislocations in 4H-SiC Substrates by Topography Analysis of Threading Edge Dislocations in Epilayers

Kamata, I. / Nagano, M. / Tsuchida, H. | British Library Online Contents | 2010

Effects of Nitrogen Doping on the Morphology of Basal Plane Dislocations in 4H-SiC Epilayers

Zhang, X. / Nagano, M. / Tsuchida, H. | British Library Online Contents | 2012

Post-Growth Reduction of Basal Plane Dislocations by High Temperature Annealing in 4H-SiC Epilayers

Mahadik, N.A. / Stahlbush, R.E. / Nath, A. et al. | British Library Online Contents | 2014