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Characterization of Basal Plane Dislocations in 4H-SiC Substrates by Topography Analysis of Threading Edge Dislocations in Epilayers
Characterization of Basal Plane Dislocations in 4H-SiC Substrates by Topography Analysis of Threading Edge Dislocations in Epilayers
Characterization of Basal Plane Dislocations in 4H-SiC Substrates by Topography Analysis of Threading Edge Dislocations in Epilayers
Kamata, I. (author) / Nagano, M. (author) / Tsuchida, H. (author) / Bauer, A.J. / Friedrichs, P. / Krieger, M. / Pensl, G. / Rupp, R. / Seyller, T.
2010-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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