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Electrical Properties of Undoped 6H- and 4H-SiC Bulk Crystals Grown by Halide Chemical Vapor Deposition
Electrical Properties of Undoped 6H- and 4H-SiC Bulk Crystals Grown by Halide Chemical Vapor Deposition
Electrical Properties of Undoped 6H- and 4H-SiC Bulk Crystals Grown by Halide Chemical Vapor Deposition
Chung, H. J. (author) / Huh, S. W. (author) / Polyakov, A. Y. (author) / Nigam, N. (author) / Li, Q. (author) / Grim, J. (author) / Skowronski, M. (author) / Glaser, E. R. (author) / Carlos, W. E. (author) / Freitas, J. A. (author)
2006-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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