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Point Defects in 4H SiC Grown by Halide Chemical Vapor Deposition
Point Defects in 4H SiC Grown by Halide Chemical Vapor Deposition
Point Defects in 4H SiC Grown by Halide Chemical Vapor Deposition
Zvanut, M. E. (author) / Chung, H. J. (author) / Polyakov, A. Y. (author) / Skowronski, M. (author) / Wright, N. / Johnson, C. M. / Vassilevski, K. / Nikitina, I. / Horsfall, A.
2007-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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