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    Interface characterization of Si-passivated HfO2 germanium capacitors using DLTS measurements

    New search for: Martens, K.
    New search for: Simoen, E.
    New search for: De Jaeger, B.
    New search for: Meuris, M.
    New search for: Groeseneken, G.
    New search for: Maes, H.

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    Interface characterization of Si-passivated HfO2 germanium capacitors using DLTS measurements

    New search for: Martens, K.
    New search for: Simoen, E.
    New search for: De Jaeger, B.
    New search for: Meuris, M.
    New search for: Groeseneken, G.
    New search for: Maes, H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Interface characterization of Si-passivated HfO2 germanium capacitors using DLTS measurements

    New search for: Martens, K.
    New search for: Simoen, E.
    New search for: De Jaeger, B.
    New search for: Meuris, M.
    New search for: Groeseneken, G.
    New search for: Maes, H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
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    Document information
    Title:

    Interface characterization of Si-passivated HfO2 germanium capacitors using DLTS measurements

    Contributors:

    Martens, K. (author) / Simoen, E. (author) / De Jaeger, B. (author) / Meuris, M. (author) / Groeseneken, G. (author) / Maes, H. (author)

    Published in:

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 9 ; 749-752

    Publication date:

    2006-01-01

    Size:

    4 pages

    ISSN:

    1369-8001

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.38152

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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