Interface characterization and current conduction in HfO2-gated MOS capacitors: Fid-Bau Portal

Interface characterization and current conduction in HfO2-gated MOS capacitors

Chen, H. W. / Chiu, F. C. / Liu, C. H. / Chen, S. Y. / Huang, H. S. / Juan, P. C. / Hwang, H. L.

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Interface characterization and current conduction in HfO2-gated MOS capacitors

Chen, H. W. / Chiu, F. C. / Liu, C. H. / Chen, S. Y. / Huang, H. S. / Juan, P. C. / Hwang, H. L.

Interface characterization and current conduction in HfO2-gated MOS capacitors

Chen, H. W. / Chiu, F. C. / Liu, C. H. / Chen, S. Y. / Huang, H. S. / Juan, P. C. / Hwang, H. L.

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Document information

Title:

Interface characterization and current conduction in HfO2-gated MOS capacitors

Contributors:

Chen, H. W. (author) / Chiu, F. C. (author) / Liu, C. H. (author) / Chen, S. Y. (author) / Huang, H. S. (author) / Juan, P. C. (author) / Hwang, H. L. (author)

Published in:

APPLIED SURFACE SCIENCE ; 254 ; 6112-6115

Publication date:

2008-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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