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    Profiling of traps in SiO2/Al2O3 gate stack by the charge pumping technique

    New search for: Crupi, I.
    New search for: Degraeve, R.
    New search for: Govoreanu, B.
    New search for: Brunco, D. P.
    New search for: Roussel, P.
    New search for: Van Houdt, J.

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    Profiling of traps in SiO2/Al2O3 gate stack by the charge pumping technique

    New search for: Crupi, I.
    New search for: Degraeve, R.
    New search for: Govoreanu, B.
    New search for: Brunco, D. P.
    New search for: Roussel, P.
    New search for: Van Houdt, J.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Profiling of traps in SiO2/Al2O3 gate stack by the charge pumping technique

    New search for: Crupi, I.
    New search for: Degraeve, R.
    New search for: Govoreanu, B.
    New search for: Brunco, D. P.
    New search for: Roussel, P.
    New search for: Van Houdt, J.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Profiling of traps in SiO2/Al2O3 gate stack by the charge pumping technique

    Contributors:

    Crupi, I. (author) / Degraeve, R. (author) / Govoreanu, B. (author) / Brunco, D. P. (author) / Roussel, P. (author) / Van Houdt, J. (author)

    Published in:

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 9 ; 889-891

    Publication date:

    2006-01-01

    Size:

    3 pages

    ISSN:

    1369-8001

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.38152

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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