Electrical and interfacial characteristics of nanolaminate (Al2O3/ZrO2/Al2O3) gate stack on fully depleted SiGe-on-insulator: Fid-Bau Portal

Electrical and interfacial characteristics of nanolaminate (Al2O3/ZrO2/Al2O3) gate stack on fully depleted SiGe-on-insulator

Di, Z. / Zhang, M. / Liu, W. / Shen, Q. / Song, Z. / Lin, C. / Huang, A. / Chu, P. K.

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Electrical and interfacial characteristics of nanolaminate (Al2O3/ZrO2/Al2O3) gate stack on fully depleted SiGe-on-insulator

Di, Z. / Zhang, M. / Liu, W. / Shen, Q. / Song, Z. / Lin, C. / Huang, A. / Chu, P. K.

Electrical and interfacial characteristics of nanolaminate (Al2O3/ZrO2/Al2O3) gate stack on fully depleted SiGe-on-insulator

Di, Z. / Zhang, M. / Liu, W. / Shen, Q. / Song, Z. / Lin, C. / Huang, A. / Chu, P. K.

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Title:

Electrical and interfacial characteristics of nanolaminate (Al2O3/ZrO2/Al2O3) gate stack on fully depleted SiGe-on-insulator

Contributors:

Di, Z. (author) / Zhang, M. (author) / Liu, W. (author) / Shen, Q. (author) / Song, Z. (author) / Lin, C. (author) / Huang, A. (author) / Chu, P. K. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 9 ; 959-963

Publication date:

2006-01-01

Size:

5 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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