Crystalline quality of 3C-SiC formed by high-fluence C+-implanted Si: Fid-Bau Portal

Crystalline quality of 3C-SiC formed by high-fluence C+-implanted Si

Intarasiri, S. / Hallen, A. / Lu, J. / Jensen, J. / Yu, L. D. / Bertilsson, K. / Wolborski, M. / Singkarat, S. / Possnert, G.

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Crystalline quality of 3C-SiC formed by high-fluence C+-implanted Si

Intarasiri, S. / Hallen, A. / Lu, J. / Jensen, J. / Yu, L. D. / Bertilsson, K. / Wolborski, M. / Singkarat, S. / Possnert, G.

Crystalline quality of 3C-SiC formed by high-fluence C+-implanted Si

Intarasiri, S. / Hallen, A. / Lu, J. / Jensen, J. / Yu, L. D. / Bertilsson, K. / Wolborski, M. / Singkarat, S. / Possnert, G.

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Check availability in my library

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Document information

Title:

Crystalline quality of 3C-SiC formed by high-fluence C+-implanted Si

Contributors:

Intarasiri, S. (author) / Hallen, A. (author) / Lu, J. (author) / Jensen, J. (author) / Yu, L. D. (author) / Bertilsson, K. (author) / Wolborski, M. (author) / Singkarat, S. (author) / Possnert, G. (author)

Published in:

APPLIED SURFACE SCIENCE ; 253 ; 4836-4842

Publication date:

2007-01-01

Size:

7 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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