A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
Effect of Surface Damaged Layers on the Electronic Properties of Hg~1~-~xMn~xTe Wafers
Effect of Surface Damaged Layers on the Electronic Properties of Hg~1~-~xMn~xTe Wafers
Effect of Surface Damaged Layers on the Electronic Properties of Hg~1~-~xMn~xTe Wafers
Zewen, W. (author) / Wanqi, J. (author) / Peisen, L. (author)
RARE METAL MATERIALS AND ENGINEERING ; 36 ; 390-393
2007-01-01
4 pages
Article (Journal)
Unknown
DDC:
669
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Raman back-scattering study of damaged and strain subsurface layers in GaAs wafers
| British Library Online Contents | 2000
Accurate infrared spectroscopy analysis in back-side damaged silicon wafers
| British Library Online Contents | 1993
On Effective Properties of Layers in Damaged Composite Laminates
| British Library Online Contents | 2012
Experimental Strengthening of Damaged and Un-Damaged RC Frames with Ultra-FRC Composite Layers
| DOAJ | 2020
Ellipsometric analysis of ultrathin oxide layers on SIMOX wafers
| British Library Online Contents | 2000