Raman back-scattering study of damaged and strain subsurface layers in GaAs wafers: Fid-Bau Portal

Raman back-scattering study of damaged and strain subsurface layers in GaAs wafers

Fengyi, Z. / Hailing, T. / Jiayu, Q. / Yonghong, W. / Ping, S. / Jing, W.

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Raman back-scattering study of damaged and strain subsurface layers in GaAs wafers

Fengyi, Z. / Hailing, T. / Jiayu, Q. / Yonghong, W. / Ping, S. / Jing, W.

Raman back-scattering study of damaged and strain subsurface layers in GaAs wafers

Fengyi, Z. / Hailing, T. / Jiayu, Q. / Yonghong, W. / Ping, S. / Jing, W.

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Check availability in my library

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Document information

Title:

Raman back-scattering study of damaged and strain subsurface layers in GaAs wafers

Contributors:

Fengyi, Z. (author) / Hailing, T. (author) / Jiayu, Q. (author) / Yonghong, W. (author) / Ping, S. (author) / Jing, W. (author)

Published in:

RARE METALS -BEIJING- ENGLISH EDITION ; 19 ; 179-182

Publication date:

2000-01-01

Size:

4 pages

ISSN:

1001-0521

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 669

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