4H-SiC Epitaxial Layers Grown on On-Axis Si-Face Substrate: Fid-Bau Portal

4H-SiC Epitaxial Layers Grown on On-Axis Si-Face Substrate

Hassan, J. / Bergman, J. P. / Henry, A. / Pedersen, H. / McNally, P. J. / Janzen, E.

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4H-SiC Epitaxial Layers Grown on On-Axis Si-Face Substrate

Hassan, J. / Bergman, J. P. / Henry, A. / Pedersen, H. / McNally, P. J. / Janzen, E.

4H-SiC Epitaxial Layers Grown on On-Axis Si-Face Substrate

Hassan, J. / Bergman, J. P. / Henry, A. / Pedersen, H. / McNally, P. J. / Janzen, E.

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Title:

4H-SiC Epitaxial Layers Grown on On-Axis Si-Face Substrate

Contributors:

Hassan, J. (author) / Bergman, J. P. (author) / Henry, A. (author) / Pedersen, H. (author) / McNally, P. J. (author) / Janzen, E. (author) / Wright, N. / Johnson, C. M. / Vassilevski, K. / Nikitina, I.

Published in:

Silicon Carbide and Related Materials 2006 ; 53-56

MATERIALS SCIENCE FORUM ; 556/557

Publication date:

2007-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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Growth of Thick 4H-SiC Epitaxial Layers on On-Axis Si-Face Substrates with HCl Addition

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