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In Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD
In Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD
In Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD
Sun, G.S. (author) / Zhao, Y.M. (author) / Wang, L. (author) / Zhao, W.S. (author) / Liu, X.F. (author) / Ji, G. (author) / Zeng, Y.P. (author)
MATERIALS SCIENCE FORUM ; 600/603 ; 147-150
2009-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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