Characterization of Homoepitaxial 4H-SiC Layer Grown from Silane/Propane System: Fid-Bau Portal

Characterization of Homoepitaxial 4H-SiC Layer Grown from Silane/Propane System

Sartel, C. / Bluet, J. M. / Souliere, V. / El-Harrouni, I. / Monteil, Y. / Mermoux, M. / Guillot, G.

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Characterization of Homoepitaxial 4H-SiC Layer Grown from Silane/Propane System

Sartel, C. / Bluet, J. M. / Souliere, V. / El-Harrouni, I. / Monteil, Y. / Mermoux, M. / Guillot, G.

Characterization of Homoepitaxial 4H-SiC Layer Grown from Silane/Propane System

Sartel, C. / Bluet, J. M. / Souliere, V. / El-Harrouni, I. / Monteil, Y. / Mermoux, M. / Guillot, G.

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Title:

Characterization of Homoepitaxial 4H-SiC Layer Grown from Silane/Propane System

Contributors:

Sartel, C. (author) / Bluet, J. M. (author) / Souliere, V. (author) / El-Harrouni, I. (author) / Monteil, Y. (author) / Mermoux, M. (author) / Guillot, G. (author) / Bergman, P. / Janzen, E.

Published in:

Silicon Carbide and Related Materials 2002 ; 165-168

MATERIALS SCIENCE FORUM ; 433/436

Publication date:

2003-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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