Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    Dislocation in 4H n^+ SiC Substrates and their Relationship with Epilayer Defects

    New search for: Wu, P.
    New search for: Emorhokpor, E.
    New search for: Yoganathan, M.
    New search for: Kerr, T.
    New search for: Zhang, J.
    New search for: Romano, E.
    New search for: Zwieback, I.
    New search for: Wright, N.
    New search for: Johnson, C. M.
    New search for: Vassilevski, K.
    New search for: Nikitina, I.
    New search for: Horsfall, A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Dislocation in 4H n^+ SiC Substrates and their Relationship with Epilayer Defects

    New search for: Wu, P.
    New search for: Emorhokpor, E.
    New search for: Yoganathan, M.
    New search for: Kerr, T.
    New search for: Zhang, J.
    New search for: Romano, E.
    New search for: Zwieback, I.
    New search for: Wright, N.
    New search for: Johnson, C. M.
    New search for: Vassilevski, K.
    New search for: Nikitina, I.
    New search for: Horsfall, A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Dislocation in 4H n^+ SiC Substrates and their Relationship with Epilayer Defects

    New search for: Wu, P.
    New search for: Emorhokpor, E.
    New search for: Yoganathan, M.
    New search for: Kerr, T.
    New search for: Zhang, J.
    New search for: Romano, E.
    New search for: Zwieback, I.
    New search for: Wright, N.
    New search for: Johnson, C. M.
    New search for: Vassilevski, K.
    New search for: Nikitina, I.
    New search for: Horsfall, A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Dislocation in 4H n^+ SiC Substrates and their Relationship with Epilayer Defects

    Contributors:

    Wu, P. (author) / Emorhokpor, E. (author) / Yoganathan, M. (author) / Kerr, T. (author) / Zhang, J. (author) / Romano, E. (author) / Zwieback, I. (author) / Wright, N. / Johnson, C. M. / Vassilevski, K.

    Published in:

    Silicon Carbide and Related Materials 2006 ; 247-250

    MATERIALS SCIENCE FORUM ; 556/557

    Publication date:

    2007-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    Improved Epilayer Surface Morphology on 2^o Off-Cut 4H-SiC Substrates

    Lilja, L. / Hassan, J.u. / Janzen, E. et al. | British Library Online Contents | 2014

    Stress State of GaN Epilayer Grown on Sapphire and 6H-SiC Substrates

    Zhang, K. / Liang, H. / Song, S. et al. | British Library Online Contents | 2013

    Thick Epilayer for Power Devices

    Henry, A. / Hassan, J. / Pedersen, H. et al. | British Library Online Contents | 2007

    Relationship between compositional modulation and ordered structure in Ga~xIn~1~-~xP epilayer

    Gu, T. / Sutton, M. / Liang, J. | British Library Online Contents | 1993

    Dislocation-Point Defects Interactions

    Gremaud, G. | British Library Online Contents | 1993

    Back to top