A platform for research: civil engineering, architecture and urbanism
Improved Epilayer Surface Morphology on 2^o Off-Cut 4H-SiC Substrates
Improved Epilayer Surface Morphology on 2^o Off-Cut 4H-SiC Substrates
Improved Epilayer Surface Morphology on 2^o Off-Cut 4H-SiC Substrates
Lilja, L. (author) / Hassan, J.u. (author) / Janzen, E. (author) / Bergman, P. (author) / Okumura, H. / Harima, H. / Kimoto, T. / Yoshimoto, M. / Watanabe, H. / Hatayama, T.
2014-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2015
|Stress State of GaN Epilayer Grown on Sapphire and 6H-SiC Substrates
British Library Online Contents | 2013
|Dislocation in 4H n^+ SiC Substrates and their Relationship with Epilayer Defects
British Library Online Contents | 2007
|Thick Epilayer for Power Devices
British Library Online Contents | 2007
|Surface Studies on Thermal Oxidation on 4H-SiC Epilayer
British Library Online Contents | 2000
|