Reliability and Degradation of Metal-Oxide-Semiconductor Capacitors on 4H- and 6H-Silicon Carbide: Fid-Bau Portal

Reliability and Degradation of Metal-Oxide-Semiconductor Capacitors on 4H- and 6H-Silicon Carbide

Treu, M. / Schorner, R. / Friedrichs, P. / Rupp, R. / Wiedenhofer, A. / Stephani, D. / Ryssel, H.

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Reliability and Degradation of Metal-Oxide-Semiconductor Capacitors on 4H- and 6H-Silicon Carbide

Treu, M. / Schorner, R. / Friedrichs, P. / Rupp, R. / Wiedenhofer, A. / Stephani, D. / Ryssel, H.

Reliability and Degradation of Metal-Oxide-Semiconductor Capacitors on 4H- and 6H-Silicon Carbide

Treu, M. / Schorner, R. / Friedrichs, P. / Rupp, R. / Wiedenhofer, A. / Stephani, D. / Ryssel, H.

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Title:

Reliability and Degradation of Metal-Oxide-Semiconductor Capacitors on 4H- and 6H-Silicon Carbide

Contributors:

Treu, M. (author) / Schorner, R. (author) / Friedrichs, P. (author) / Rupp, R. (author) / Wiedenhofer, A. (author) / Stephani, D. (author) / Ryssel, H. (author)

Published in:

MATERIALS SCIENCE FORUM ; 338/342 ; 1089-1092

Publication date:

2000-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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