Effect of the post-deposition annealing on electrical characteristics of MIS structures with HfO2/SiO2 gate dielectric stacks

Taube, A. / Mroczynski, R. / Korwin-Mikke, K. et al. | British Library Online Contents | 2012

Control of the Flatband Voltage of 4H-SiC Metal-Oxide Semiconductor (MOS) Capacitors by Co-Implantation of Nitrogen and Aluminum

Frank, T. / Beljakowa, S. / Pensl, G. et al. | British Library Online Contents | 2007

Application of deposited by ALD HfO2 and Al2O3 layers in double-gate dielectric stacks for non-volatile semiconductor memory (NVSM) devices

Mroczynski, R. / Taube, A. / Gieraltowska, S. et al. | British Library Online Contents | 2012

Low voltage stress-induced leakage current in HfO2 dielectric films

Tan, T. / Liu, Z. / Tian, H. et al. | British Library Online Contents | 2010

HfO2/GeOxNy/Ge gate stacks with sub-nanometer capacitance equivalent thickness and low interface trap density by in situ NH3 plasma pretreatment

Cao, Y. Q. / Chen, J. / Liu, X. J. et al. | British Library Online Contents | 2015