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Fabrication and Characterization of 4H-SiC MOSFET with MOCVD-Grown Al~2O~3 Gate Insulator
Fabrication and Characterization of 4H-SiC MOSFET with MOCVD-Grown Al~2O~3 Gate Insulator
Fabrication and Characterization of 4H-SiC MOSFET with MOCVD-Grown Al~2O~3 Gate Insulator
Hino, S. (author) / Hatayama, T. (author) / Miura, N. (author) / Oomori, T. (author) / Tokumitsu, E. (author) / Wright, N. / Johnson, C. M. / Vassilevski, K. / Nikitina, I. / Horsfall, A.
2007-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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