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    Realization of Low On-Resistance 4H-SiC Power MOSFETs by Using Retrograde Profile in P-Body

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    Realization of Low On-Resistance 4H-SiC Power MOSFETs by Using Retrograde Profile in P-Body

    New search for: Fujihira, K.
    New search for: Miura, N.
    New search for: Watanabe, T.
    New search for: Nakao, Y.
    New search for: Yutani, N.
    New search for: Ohtsuka, K. I.
    New search for: Imaizumi, M.
    New search for: Takami, T.
    New search for: Oomori, T.
    New search for: Wright, N.
    New search for: Johnson, C. M.
    New search for: Vassilevski, K.
    New search for: Nikitina, I.
    New search for: Horsfall, A.

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    Realization of Low On-Resistance 4H-SiC Power MOSFETs by Using Retrograde Profile in P-Body

    New search for: Fujihira, K.
    New search for: Miura, N.
    New search for: Watanabe, T.
    New search for: Nakao, Y.
    New search for: Yutani, N.
    New search for: Ohtsuka, K. I.
    New search for: Imaizumi, M.
    New search for: Takami, T.
    New search for: Oomori, T.
    New search for: Wright, N.
    New search for: Johnson, C. M.
    New search for: Vassilevski, K.
    New search for: Nikitina, I.
    New search for: Horsfall, A.

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    Document information
    Title:

    Realization of Low On-Resistance 4H-SiC Power MOSFETs by Using Retrograde Profile in P-Body

    Contributors:

    Fujihira, K. (author) / Miura, N. (author) / Watanabe, T. (author) / Nakao, Y. (author) / Yutani, N. (author) / Ohtsuka, K. I. (author) / Imaizumi, M. (author) / Takami, T. (author) / Oomori, T. (author) / Wright, N.

    Published in:

    Silicon Carbide and Related Materials 2006 ; 827-830

    MATERIALS SCIENCE FORUM ; 556/557

    Publication date:

    2007-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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