Influence of Stacking Faults on the I-V Characteristics of 4H-SiC Schottky Barrier Diodes Fabricated on the (11&unknown;0) Face: Fid-Bau Portal

Influence of Stacking Faults on the I-V Characteristics of 4H-SiC Schottky Barrier Diodes Fabricated on the (11&unknown;0) Face

Kojima, K. / Ohno, T. / Fujimoto, T. / Katsuno, M. / Ohtani, N. / Nishio, J. / Ishida, Y. / Takahashi, T. / Suzuki, T. / Tanaka, T.

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Influence of Stacking Faults on the I-V Characteristics of 4H-SiC Schottky Barrier Diodes Fabricated on the (11&unknown;0) Face

Kojima, K. / Ohno, T. / Fujimoto, T. / Katsuno, M. / Ohtani, N. / Nishio, J. / Ishida, Y. / Takahashi, T. / Suzuki, T. / Tanaka, T.

Influence of Stacking Faults on the I-V Characteristics of 4H-SiC Schottky Barrier Diodes Fabricated on the (11&unknown;0) Face

Kojima, K. / Ohno, T. / Fujimoto, T. / Katsuno, M. / Ohtani, N. / Nishio, J. / Ishida, Y. / Takahashi, T. / Suzuki, T. / Tanaka, T.

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Title:

Influence of Stacking Faults on the I-V Characteristics of 4H-SiC Schottky Barrier Diodes Fabricated on the (11&unknown;0) Face

Contributors:

Kojima, K. (author) / Ohno, T. (author) / Fujimoto, T. (author) / Katsuno, M. (author) / Ohtani, N. (author) / Nishio, J. (author) / Ishida, Y. (author) / Takahashi, T. (author) / Suzuki, T. (author) / Tanaka, T. (author)

Published in:

Silicon Carbide and Related Materials 2002 ; 925-928

MATERIALS SCIENCE FORUM ; 433/436

Publication date:

2003-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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