High Temperature Applications of 4H-SiC Vertical Junction Field-Effect Transistors and Schottky Diodes: Fid-Bau Portal

High Temperature Applications of 4H-SiC Vertical Junction Field-Effect Transistors and Schottky Diodes

Bhatnagar, P. / Wright, N. G. / Horsfall, A. / Johnson, C. M. / Uren, M. J. / Hilton, K. P. / Munday, A. G. / Hydes, A. J.

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High Temperature Applications of 4H-SiC Vertical Junction Field-Effect Transistors and Schottky Diodes

Bhatnagar, P. / Wright, N. G. / Horsfall, A. / Johnson, C. M. / Uren, M. J. / Hilton, K. P. / Munday, A. G. / Hydes, A. J.

High Temperature Applications of 4H-SiC Vertical Junction Field-Effect Transistors and Schottky Diodes

Bhatnagar, P. / Wright, N. G. / Horsfall, A. / Johnson, C. M. / Uren, M. J. / Hilton, K. P. / Munday, A. G. / Hydes, A. J.

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Document information

Title:

High Temperature Applications of 4H-SiC Vertical Junction Field-Effect Transistors and Schottky Diodes

Contributors:

Bhatnagar, P. (author) / Wright, N. G. (author) / Horsfall, A. (author) / Johnson, C. M. (author) / Uren, M. J. (author) / Hilton, K. P. (author) / Munday, A. G. (author) / Hydes, A. J. (author) / Wright, N. / Johnson, C. M.

Published in:

Silicon Carbide and Related Materials 2006 ; 987-990

MATERIALS SCIENCE FORUM ; 556/557

Publication date:

2007-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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