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New Diode Designs Compatible with Vertical 4H-SiC JFET Fabrication Process

Brosselard, P. / Tournier, D. / Vellvehi, M. / Montserrat, J. / Godignon, P. / Millan, J.

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New Diode Designs Compatible with Vertical 4H-SiC JFET Fabrication Process

Brosselard, P. / Tournier, D. / Vellvehi, M. / Montserrat, J. / Godignon, P. / Millan, J.

New Diode Designs Compatible with Vertical 4H-SiC JFET Fabrication Process

Brosselard, P. / Tournier, D. / Vellvehi, M. / Montserrat, J. / Godignon, P. / Millan, J.

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Title:

New Diode Designs Compatible with Vertical 4H-SiC JFET Fabrication Process

Contributors:

Brosselard, P. (author) / Tournier, D. (author) / Vellvehi, M. (author) / Montserrat, J. (author) / Godignon, P. (author) / Millan, J. (author) / Wright, N. / Johnson, C. M. / Vassilevski, K. / Nikitina, I.

Published in:

Silicon Carbide and Related Materials 2006 ; 1003-1006

MATERIALS SCIENCE FORUM ; 556/557

Publication date:

2007-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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