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Low-temperature formation of silicon nitride films using pulsed-plasma CVD under near atmospheric pressure
Low-temperature formation of silicon nitride films using pulsed-plasma CVD under near atmospheric pressure
Low-temperature formation of silicon nitride films using pulsed-plasma CVD under near atmospheric pressure
Matsumoto, M. (author) / Inayoshi, Y. (author) / Suemitsu, M. (author) / Miyamoto, E. (author) / Yara, T. (author) / Nakajima, S. (author) / Uehara, T. (author) / Toyoshima, Y. (author)
APPLIED SURFACE SCIENCE ; 254 ; 6208-6210
2008-01-01
3 pages
Article (Journal)
English
DDC:
621.35
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