Enhanced growth of low-resistivity cobalt silicide by using a Co/Au/Co trilayer film on Si0.8Ge0.2 virtual substrate: Fid-Bau Portal

Enhanced growth of low-resistivity cobalt silicide by using a Co/Au/Co trilayer film on Si0.8Ge0.2 virtual substrate

Cheng, S. L. / Chen, H. Y. / Lee, S. W.

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Enhanced growth of low-resistivity cobalt silicide by using a Co/Au/Co trilayer film on Si0.8Ge0.2 virtual substrate

Cheng, S. L. / Chen, H. Y. / Lee, S. W.

Enhanced growth of low-resistivity cobalt silicide by using a Co/Au/Co trilayer film on Si0.8Ge0.2 virtual substrate

Cheng, S. L. / Chen, H. Y. / Lee, S. W.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Enhanced growth of low-resistivity cobalt silicide by using a Co/Au/Co trilayer film on Si0.8Ge0.2 virtual substrate

Contributors:

Cheng, S. L. (author) / Chen, H. Y. (author) / Lee, S. W. (author)

Published in:

APPLIED SURFACE SCIENCE ; 254 ; 6211-6214

Publication date:

2008-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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