Internal photoemission study on charge trapping behavior in rapid thermal oxides on strained-Si/SiGe heterolayers: Fid-Bau Portal

Internal photoemission study on charge trapping behavior in rapid thermal oxides on strained-Si/SiGe heterolayers

Bera, M. K. / Mahata, C. / Bhattacharya, S. / Chakraborty, A. K. / Armstrong, B. M. / Gamble, H. S. / Maiti, C. K.

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Internal photoemission study on charge trapping behavior in rapid thermal oxides on strained-Si/SiGe heterolayers

Bera, M. K. / Mahata, C. / Bhattacharya, S. / Chakraborty, A. K. / Armstrong, B. M. / Gamble, H. S. / Maiti, C. K.

Internal photoemission study on charge trapping behavior in rapid thermal oxides on strained-Si/SiGe heterolayers

Bera, M. K. / Mahata, C. / Bhattacharya, S. / Chakraborty, A. K. / Armstrong, B. M. / Gamble, H. S. / Maiti, C. K.

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Document information

Title:

Internal photoemission study on charge trapping behavior in rapid thermal oxides on strained-Si/SiGe heterolayers

Contributors:

Bera, M. K. (author) / Mahata, C. (author) / Bhattacharya, S. (author) / Chakraborty, A. K. (author) / Armstrong, B. M. (author) / Gamble, H. S. (author) / Maiti, C. K. (author)

Published in:

APPLIED SURFACE SCIENCE ; 255 ; 2971-2977

Publication date:

2008-01-01

Size:

7 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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Optical anisotropies in strained Si/SiGe systems

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