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Reliability study of ultra-thin gate oxides on strained-Si/SiGe MOS structures

Varzgar, J. B. / Kanoun, M. / Uppal, S. / Chattopadhyay, S. / Tsang, Y. L. / Escobedo-Cousins, E. / Olsen, S. H. / O'Neill, A. / Hellstrom, P. E. / Edholm, J.

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Reliability study of ultra-thin gate oxides on strained-Si/SiGe MOS structures

Varzgar, J. B. / Kanoun, M. / Uppal, S. / Chattopadhyay, S. / Tsang, Y. L. / Escobedo-Cousins, E. / Olsen, S. H. / O'Neill, A. / Hellstrom, P. E. / Edholm, J.

Reliability study of ultra-thin gate oxides on strained-Si/SiGe MOS structures

Varzgar, J. B. / Kanoun, M. / Uppal, S. / Chattopadhyay, S. / Tsang, Y. L. / Escobedo-Cousins, E. / Olsen, S. H. / O'Neill, A. / Hellstrom, P. E. / Edholm, J.

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Title:

Reliability study of ultra-thin gate oxides on strained-Si/SiGe MOS structures

Contributors:

Varzgar, J. B. (author) / Kanoun, M. (author) / Uppal, S. (author) / Chattopadhyay, S. (author) / Tsang, Y. L. (author) / Escobedo-Cousins, E. (author) / Olsen, S. H. (author) / O'Neill, A. (author) / Hellstrom, P. E. (author) / Edholm, J. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 135 ; 203-206

Publication date:

2006-01-01

Size:

4 pages

ISSN:

Type of media:

Article (Journal)

Type of material:

Print

Language:

English

Classification:

© Metadata Copyright the British Library Board and other contributors. All rights reserved.

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