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Improved free-standing GaN Schottky diode characteristics using chemical mechanical polishing
Improved free-standing GaN Schottky diode characteristics using chemical mechanical polishing
Improved free-standing GaN Schottky diode characteristics using chemical mechanical polishing
Arjunan, A. C. (author) / Singh, D. (author) / Wang, H. T. (author) / Ren, F. (author) / Kumar, P. (author) / Singh, R. K. (author) / Pearton, S. J. (author)
APPLIED SURFACE SCIENCE ; 255 ; 3085-3089
2008-01-01
5 pages
Article (Journal)
English
DDC:
621.35
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