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Effect of Si interlayer thickness and post-metallization annealing on Ge MOS capacitor on Ge-on-Si substrate
Effect of Si interlayer thickness and post-metallization annealing on Ge MOS capacitor on Ge-on-Si substrate
Effect of Si interlayer thickness and post-metallization annealing on Ge MOS capacitor on Ge-on-Si substrate
Yoo, O. S. (author) / Oh, J. (author) / Kang, C. Y. (author) / Lee, B. H. (author) / Han, I. S. (author) / Choi, W. H. (author) / Kwon, H. M. (author) / Na, M. K. (author) / Majhi, P. (author) / Tseng, H. H. (author)
MATERIALS SCIENCE AND ENGINEERING B ADVANCED FUNCTIONAL SOLID STATE MATERIALS ; 154-155 ; 102-105
2008-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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Rapid thermal post-metallization annealing effect on thin gate oxides
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