A platform for research: civil engineering, architecture and urbanism
Polishing Characteristics of CMP for Oxygen Free Copper with Manganese Oxide Abrasives
Polishing Characteristics of CMP for Oxygen Free Copper with Manganese Oxide Abrasives
Polishing Characteristics of CMP for Oxygen Free Copper with Manganese Oxide Abrasives
Sato, R. (author) / Ichida, Y. (author) / Morimoto, Y. (author) / Shimizu, K. (author)
KEY ENGINEERING MATERIALS ; 389/390 ; 515-520
2009-01-01
6 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Polishing Characteristics of CMP for Oxygen Free Copper with Manganese Oxide Abrasives
British Library Conference Proceedings | 2009
|Chemical-mechanical polishing of copper and tantalum with silica abrasives
British Library Online Contents | 2001
|Chemical-Mechanical Polishing of Wafers with Copper Film by Nano-Scale Abrasives
British Library Online Contents | 2008
|Effects of mixed abrasives in chemical mechanical polishing of oxide films
British Library Online Contents | 2003
|Prediction of Material Removal in Polishing Free-Form Surfaces with Fixed Abrasives
British Library Online Contents | 2004
|