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Study on charge trap layer in nanocrystal charge trap MOSFET

Seung Su Cho, / Kyong Hee Joo, / In-Seok Yeo, / IlSub Chung,

In this study, we have investigated the performance two types of nonvolatile MOSFET devices in terms of the performance and reliability. Either SRO (Silicon Rich Oxide) or SRON (Silicon Rich OxyNitride) trap layer was used as a charge trap layer. The trap layers were deposited using ALD (Atomic Layer Deposition) method. The transistor with SRON trap layer combined with thinner tunneling oxide yields larger memory window but worse retention characteristics.

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Study on charge trap layer in nanocrystal charge trap MOSFET

Seung Su Cho, / Kyong Hee Joo, / In-Seok Yeo, / IlSub Chung,

In this study, we have investigated the performance two types of nonvolatile MOSFET devices in terms of the performance and reliability. Either SRO (Silicon Rich Oxide) or SRON (Silicon Rich OxyNitride) trap layer was used as a charge trap layer. The trap layers were deposited using ALD (Atomic Layer Deposition) method. The transistor with SRON trap layer combined with thinner tunneling oxide yields larger memory window but worse retention characteristics.

Study on charge trap layer in nanocrystal charge trap MOSFET

Seung Su Cho, / Kyong Hee Joo, / In-Seok Yeo, / IlSub Chung,

In this study, we have investigated the performance two types of nonvolatile MOSFET devices in terms of the performance and reliability. Either SRO (Silicon Rich Oxide) or SRON (Silicon Rich OxyNitride) trap layer was used as a charge trap layer. The trap layers were deposited using ALD (Atomic Layer Deposition) method. The transistor with SRON trap layer combined with thinner tunneling oxide yields larger memory window but worse retention characteristics.

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Title:

Study on charge trap layer in nanocrystal charge trap MOSFET

Contributors:

Seung Su Cho, (author) / Kyong Hee Joo, (author) / In-Seok Yeo, (author) / IlSub Chung, (author)

Published in:

2006 IEEE Nanotechnology Materials and Devices Conference ; 1 ; 696-697

Publication date:

2006-10-01

Size:

735438 byte

ISBN:

978-1-4244-0541-1 , 978-1-4244-0540-4

DOI:

https://doi.org/10.1109/NMDC.2006.4388966

Type of media:

Conference paper

Type of material:

Electronic Resource

Language:

English

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