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Dynamical Simulations of Dry Oxidation and NO Annealing of SiO~2/4H-SiC Interface on C-Face at 1500K: From First Principles
Dynamical Simulations of Dry Oxidation and NO Annealing of SiO~2/4H-SiC Interface on C-Face at 1500K: From First Principles
Dynamical Simulations of Dry Oxidation and NO Annealing of SiO~2/4H-SiC Interface on C-Face at 1500K: From First Principles
Ohnuma, T. (author) / Miyashita, A. (author) / Yoshikawa, M. (author) / Tsuchida, H. (author) / Bauer, A.J. / Friedrichs, P. / Krieger, M. / Pensl, G. / Rupp, R. / Seyller, T.
2010-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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