Dynamical Simulation of SiO~2/4H-SiC(0001) Interface Oxidation Process: from First-Principles

Ohnuma, T. / Miyashita, A. / Iwasawa, M. et al. | British Library Online Contents | 2007

Dynamical Simulations of Dry Oxidation and NO Annealing of SiO~2/4H-SiC Interface on C-Face at 1500K: From First Principles

Ohnuma, T. / Miyashita, A. / Yoshikawa, M. et al. | British Library Online Contents | 2010

O2 oxidation reaction at the Si(100)-SiO2 interface: A first-principles investigation

Bongiorno, A. / Pasquarello, A. | British Library Online Contents | 2005

First Principles Dynamical Calculation for Atomic Diffusion in Silicon

Kato, K. | British Library Conference Proceedings | 1993

GaN/LiNbO3 (0001) interface formation calculated from first-principles

Sanna, S. / Schmidt, W. G. | British Library Online Contents | 2010