Correlation between Inversion Channel Mobility and Interface Traps near the Conduction Band in SiC MOSFETs

Suzuki, S. / Harada, S. / Kosugi, R. et al. | British Library Online Contents | 2002

High Channel Mobility 4H-SiC MOSFETs

Sveinbjornsson, E. O. / Gudjonsson, G. / Allerstam, F. et al. | British Library Online Contents | 2006

Mobility in 6H-SiC n-Channel MOSFETs

Scozzie, C. J. / Lelis, A. J. / McLean, F. B. | British Library Online Contents | 2000

Verification of Near-Interface Traps Models by Electrical Measurements on 4H-SiC n-Channel Mosfets

Uhnevionak, V. / Strenger, C. / Burenkov, A. et al. | British Library Online Contents | 2013

Interface state density and channel mobility for 4H-SiC MOSFETs with nitrogen passivation

Chung, G. Y. / Williams, J. R. / Tin, C. C. et al. | British Library Online Contents | 2001