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Criteria for Accurate Measurement of Charge-Pumping Current in 4H-SiC MOSFETs

Okamoto, D. / Yano, H. / Hatayama, T. / Uraoka, Y. / Fuyuki, T.

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Criteria for Accurate Measurement of Charge-Pumping Current in 4H-SiC MOSFETs

Okamoto, D. / Yano, H. / Hatayama, T. / Uraoka, Y. / Fuyuki, T.

Criteria for Accurate Measurement of Charge-Pumping Current in 4H-SiC MOSFETs

Okamoto, D. / Yano, H. / Hatayama, T. / Uraoka, Y. / Fuyuki, T.

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Check availability in my library

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Document information

Title:

Criteria for Accurate Measurement of Charge-Pumping Current in 4H-SiC MOSFETs

Contributors:

Okamoto, D. (author) / Yano, H. (author) / Hatayama, T. (author) / Uraoka, Y. (author) / Fuyuki, T. (author)

Published in:

MATERIALS SCIENCE FORUM ; 600/603 ; 747-750

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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