High-Current, NO-Annealed Lateral 4H-SiC MOSFETs: Fid-Bau Portal

High-Current, NO-Annealed Lateral 4H-SiC MOSFETs

Das, M. K. / Chung, G. Y. / Williams, J. R. / Saks, N. S. / Lipkin, L. A. / Palmour, J. W.

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High-Current, NO-Annealed Lateral 4H-SiC MOSFETs

Das, M. K. / Chung, G. Y. / Williams, J. R. / Saks, N. S. / Lipkin, L. A. / Palmour, J. W.

High-Current, NO-Annealed Lateral 4H-SiC MOSFETs

Das, M. K. / Chung, G. Y. / Williams, J. R. / Saks, N. S. / Lipkin, L. A. / Palmour, J. W.

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Check availability in my library

Order at Subito €

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Document information

Title:

High-Current, NO-Annealed Lateral 4H-SiC MOSFETs

Contributors:

Das, M. K. (author) / Chung, G. Y. (author) / Williams, J. R. (author) / Saks, N. S. (author) / Lipkin, L. A. (author) / Palmour, J. W. (author)

Published in:

MATERIALS SCIENCE FORUM ; 389/393 ; 981-984

Publication date:

2002-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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