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Characterization of POCl~3-Annealed 4H-Sic Mosfets by Charge Pumping Technique
Characterization of POCl~3-Annealed 4H-Sic Mosfets by Charge Pumping Technique
Characterization of POCl~3-Annealed 4H-Sic Mosfets by Charge Pumping Technique
Osawa, A. (author) / Yano, H. (author) / Hatayama, T. (author) / Fuyuki, T. (author) / Lebedev, A.A. / Davydov, S.Y. / Ivanov, P.A. / Levinshtein, M.E.
2013-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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