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Correlation between Thermal Oxide Breakdown and Defects in n-Type 4H-SiC Epitaxial Wafers
Correlation between Thermal Oxide Breakdown and Defects in n-Type 4H-SiC Epitaxial Wafers
Correlation between Thermal Oxide Breakdown and Defects in n-Type 4H-SiC Epitaxial Wafers
Soloviev, S. (author) / Matocha, K. (author) / Dunne, G. (author) / Stum, Z. (author)
MATERIALS SCIENCE FORUM ; 600/603 ; 775-778
2009-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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