Reliability of Gate Oxides on 4H-SiC Epitaxial Surface Planarized by CMP Treatment: Fid-Bau Portal

Reliability of Gate Oxides on 4H-SiC Epitaxial Surface Planarized by CMP Treatment

Yamada, K. / Ishiyama, O. / Tamura, K. / Yamashita, T. / Shimozato, A. / Kato, T. / Senzaki, J. / Matsuhata, H. / Kitabatake, M.

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Reliability of Gate Oxides on 4H-SiC Epitaxial Surface Planarized by CMP Treatment

Yamada, K. / Ishiyama, O. / Tamura, K. / Yamashita, T. / Shimozato, A. / Kato, T. / Senzaki, J. / Matsuhata, H. / Kitabatake, M.

Reliability of Gate Oxides on 4H-SiC Epitaxial Surface Planarized by CMP Treatment

Yamada, K. / Ishiyama, O. / Tamura, K. / Yamashita, T. / Shimozato, A. / Kato, T. / Senzaki, J. / Matsuhata, H. / Kitabatake, M.

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Title:

Reliability of Gate Oxides on 4H-SiC Epitaxial Surface Planarized by CMP Treatment

Contributors:

Yamada, K. (author) / Ishiyama, O. (author) / Tamura, K. (author) / Yamashita, T. (author) / Shimozato, A. (author) / Kato, T. (author) / Senzaki, J. (author) / Matsuhata, H. (author) / Kitabatake, M. (author) / Okumura, H.

Published in:

Silicon Carbide and Related Materials 2013 PART 1 Selected, peer reviewed papers from the 15^t^h International Conference on Silicon Carbide and Related Materials, (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan ; 545-548

MATERIALS SCIENCE FORUM ; 778/780

Publication date:

2014-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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