The Preparation of World-Class Single Crystal Silicon Carbide Wafers Using High Rate Chemical Mechanical Planarization Slurries: Fid-Bau Portal

The Preparation of World-Class Single Crystal Silicon Carbide Wafers Using High Rate Chemical Mechanical Planarization Slurries

White, M.L. / Reggie, S. / Naguib, N. / Nicholson, K. / Gilliland, J. / Walters, A.

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The Preparation of World-Class Single Crystal Silicon Carbide Wafers Using High Rate Chemical Mechanical Planarization Slurries

White, M.L. / Reggie, S. / Naguib, N. / Nicholson, K. / Gilliland, J. / Walters, A.

The Preparation of World-Class Single Crystal Silicon Carbide Wafers Using High Rate Chemical Mechanical Planarization Slurries

White, M.L. / Reggie, S. / Naguib, N. / Nicholson, K. / Gilliland, J. / Walters, A.

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Title:

The Preparation of World-Class Single Crystal Silicon Carbide Wafers Using High Rate Chemical Mechanical Planarization Slurries

Contributors:

White, M.L. (author) / Reggie, S. (author) / Naguib, N. (author) / Nicholson, K. (author) / Gilliland, J. (author) / Walters, A. (author)

Published in:

MATERIALS SCIENCE FORUM ; 600/603 ; 839-842

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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