Temperature Dependence of Plasma Chemical Vaporization Machining of Silicon and Silicon Carbide: Fid-Bau Portal

Temperature Dependence of Plasma Chemical Vaporization Machining of Silicon and Silicon Carbide

Sano, Y. / Watanabe, M. / Kato, T. / Yamamura, K. / Mimura, H. / Yamauchi, K.

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Temperature Dependence of Plasma Chemical Vaporization Machining of Silicon and Silicon Carbide

Sano, Y. / Watanabe, M. / Kato, T. / Yamamura, K. / Mimura, H. / Yamauchi, K.

Temperature Dependence of Plasma Chemical Vaporization Machining of Silicon and Silicon Carbide

Sano, Y. / Watanabe, M. / Kato, T. / Yamamura, K. / Mimura, H. / Yamauchi, K.

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Check availability in my library

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Document information

Title:

Temperature Dependence of Plasma Chemical Vaporization Machining of Silicon and Silicon Carbide

Contributors:

Sano, Y. (author) / Watanabe, M. (author) / Kato, T. (author) / Yamamura, K. (author) / Mimura, H. (author) / Yamauchi, K. (author)

Published in:

MATERIALS SCIENCE FORUM ; 600/603 ; 847-850

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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