A platform for research: civil engineering, architecture and urbanism
Reliability Aspects of High Voltage 4H-SiC JBS Diodes
Reliability Aspects of High Voltage 4H-SiC JBS Diodes
Reliability Aspects of High Voltage 4H-SiC JBS Diodes
Brosselard, P. (author) / Camara, N. (author) / Jorda, X. (author) / Vellvehi, M. (author) / Bano, E. (author) / Millan, J. (author) / Godignon, P. (author)
MATERIALS SCIENCE FORUM ; 600/603 ; 935-938
2009-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Degradation of SiC High-Voltage pin Diodes
British Library Online Contents | 2005
|Current Voltage Characteristics of High-Voltage 4H Silicon Carbide Diodes
British Library Online Contents | 2000
|Material quality improvements for high voltage 4H-SiC diodes
British Library Online Contents | 2001
|The Deep Boron Level in High-Voltage PiN Diodes
British Library Online Contents | 2002
|High-Power SiC Diodes: Characteristics, Reliability and Relation to Material Defects
British Library Online Contents | 2002
|