Schottky Barrier Diode Fabricated by MOCVD-Grown Epilayer Using Bis-Trimethylsilylmethane Precursor: Fid-Bau Portal

Schottky Barrier Diode Fabricated by MOCVD-Grown Epilayer Using Bis-Trimethylsilylmethane Precursor

Song, H.K. / Lee, J.H. / Oh, M.S. / Moon, J.H. / Seo, H.S. / Yim, J.H. / Kwon, S.Y. / Kim, H.J.

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Schottky Barrier Diode Fabricated by MOCVD-Grown Epilayer Using Bis-Trimethylsilylmethane Precursor

Song, H.K. / Lee, J.H. / Oh, M.S. / Moon, J.H. / Seo, H.S. / Yim, J.H. / Kwon, S.Y. / Kim, H.J.

Schottky Barrier Diode Fabricated by MOCVD-Grown Epilayer Using Bis-Trimethylsilylmethane Precursor

Song, H.K. / Lee, J.H. / Oh, M.S. / Moon, J.H. / Seo, H.S. / Yim, J.H. / Kwon, S.Y. / Kim, H.J.

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Title:

Schottky Barrier Diode Fabricated by MOCVD-Grown Epilayer Using Bis-Trimethylsilylmethane Precursor

Contributors:

Song, H.K. (author) / Lee, J.H. (author) / Oh, M.S. (author) / Moon, J.H. (author) / Seo, H.S. (author) / Yim, J.H. (author) / Kwon, S.Y. (author) / Kim, H.J. (author)

Published in:

MATERIALS SCIENCE FORUM ; 600/603 ; 971-974

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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